Device including a switching unit and applications thereof

ABSTRACT

A device includes a switching unit including N input ports and M output ports, wherein N≥M≥2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.

FIELD

The present disclosure relates in general to electronic devices. Moreparticular, the disclosure relates to devices including a switching unitand applications thereof.

BACKGROUND

Radio transceivers like portable cellular devices include an RF frontend arranged between the digital baseband system and the antennas of theradio transceiver. Components of the RF front end, such as e.g. poweramplifiers, and the antennas of the radio transceiver may be controlledand tuned during operation.

Mobile communication standards evolve over time, thereby providing noveltechnical features. For example, carrier aggregation represents animportant feature for the mobile communication industry in 3GPPLTE-Advanced. In carrier aggregation, multiple uplink or downlink LTEcarriers in contiguous or non-contiguous frequency bands may be bundled.Radio transceivers and their components need to be compatible with theevolving mobile communication standards.

SUMMARY

In accordance with an aspect, a device includes a switching unitincluding N input ports and M output ports, wherein N≥M≥2. The switchingunit is configured to selectively interconnect each of the M outputports with a different one of the N input ports. The device furtherincludes M attenuators, wherein each of the M attenuators iselectrically coupled to a different one of the M output ports of theswitching unit.

In accordance with a further aspect, a device includes a single-poledouble-throw switch including a first input port, a second input portand an output port. The device further includes a diplexer including aninput port, a first output port and a second output port, wherein theinput port of the diplexer is electrically coupled to the output port ofthe single-pole double-throw switch. The device further includes a firstattenuator electrically coupled to the first output port of the diplexerand a second attenuator electrically coupled to the second output portof the diplexer.

In accordance with a further aspect, a device includes at least twodirectional couplers, wherein each of the directional couplers isconfigured to be arranged in an uplink transmission path of an RF frontend. The device further includes an M-pole N-throw switch including Ninput ports and M output ports, wherein N≥M≥2. Each of the N input portsis electrically coupled to a coupled port of a directional coupler or anisolated port of a directional coupler.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of aspects and are incorporated in and constitute a partof this specification. The drawings illustrate aspects and together withthe description serve to explain principles of aspects. Other aspectsand many of the intended advantages of aspects will be readilyappreciated as they become better understood by reference to thefollowing detailed description. The elements of the drawings are notnecessarily to scale relative to each other. Like reference signs maydesignate corresponding similar parts.

FIG. 1 illustrates a schematic diagram of a device 100 in accordancewith the disclosure. The device 100 includes a switching unit andattenuators.

FIG. 2 illustrates a schematic diagram of a device 200 in accordancewith the disclosure. The device 200 includes a single-pole double-throwswitch, a diplexer and attenuators.

FIG. 3 illustrates a schematic diagram of a device 300 in accordancewith the disclosure. The device 300 includes directional couplers and anM-pole N-throw switch.

FIG. 4 illustrates a schematic diagram of a device 400 in accordancewith some examples. The device 400 includes a switching unit andattenuators.

FIG. 5 illustrates a schematic diagram of a device 500 in accordancewith some examples. The device 500 is similar to the device 400 andfurther includes low pass filters electrically coupled to theattenuators.

FIG. 6 illustrates a schematic diagram of a device 600 in accordancewith some examples. The device 600 is similar to the device 400 andfurther includes low pass filters electrically coupled to the switchingunit.

FIG. 7 illustrates a schematic diagram of a device 700 in accordancewith some examples. The device 700 is similar to the device 500 andfurther includes switches electrically interconnected between areference voltage and the switching unit.

FIG. 8 illustrates a schematic diagram of a device 800 in accordancewith some examples. The device 800 is similar to the device 700 andfurther includes resistors electrically interconnected between theswitches and the reference voltage.

FIG. 9 illustrates a schematic diagram of a device 900 in accordancewith some examples. The device 900 is similar to the device 800 andfurther includes switches configured to bypass the resistors.

FIG. 10 illustrates a schematic diagram of a device 1000 in accordancewith some examples. The device 1000 is similar to the device 500 andfurther includes single-ended to differential converters arrangeddownstream of the attenuators.

FIG. 11 illustrates a schematic diagram of a device 1100 in accordancewith some examples. The device 1100 is similar to the device 200 andfurther includes low pass filters electrically coupled to theattenuators.

FIG. 12 illustrates a schematic diagram of a device 1200 in accordancewith some examples. The device 1200 is similar to the device 500 andfurther includes directional couplers electrically coupled to theswitching unit.

FIG. 13 illustrates a schematic diagram of a circuitry 1300 including adevice in accordance with some examples similar to the device 500. Thecircuitry 1300 may be included in a radio transceiver.

FIG. 14 illustrates a schematic diagram of a circuitry 1400 including adevice in accordance with some examples similar to the device 1100. Thecircuitry 1400 may be included in a radio transceiver.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, in which are shown by way of illustrationspecific aspects in which the disclosure may be practiced. Other aspectsmay be utilized and structural or logical changes may be made withoutdeparting from the concept of the present disclosure. Hence, thefollowing detailed description is not to be taken in a limiting sense,and the concept of the present disclosure is defined by the appendedclaims.

FIG. 1 illustrates a schematic diagram of a device 100 in accordancewith the disclosure. The device 100 is illustrated in a general mannerin order to qualitatively specify an aspect of the disclosure. Thedevice 100 may include further components which are not illustrated forthe sake of simplicity. For example, the device 100 may further includeone or more components of other devices described herein.

The device 100 may include a switching unit 2 including N input ports4.1 to 4.N and M output ports 6.1 to 6.M, wherein N≥M≥2. The switchingunit 2 may be configured to selectively interconnect each of the Moutput ports 6.1 to 6.M with a different one of the N input ports 4.1 to4.N. The device 100 may further include M attenuators 8.1 to 8.M,wherein each of the M attenuators 8.1 to 8.M may be electrically coupledto a different one of the M output ports 6.1 to 6.M of the switchingunit 2.

The device 100 may be included in a radio transceiver, such as e.g. aportable cellular device, and in particular in an RF front end of aradio transceiver. During an operation of the radio transceiver, one ormore components of the radio transceiver may need to be controlled ortuned in order to improve a transmission and/or reception behavior ofthe radio transceiver. In one example, the gain of a power amplifierarranged in a transmission/reception path of the RF front end may becontrolled. In a further example, a transmission antenna of the radiotransceiver may be tuned. A suitable control or tuning of such radiotransceiver components may depend on properties (e.g. power, mismatch,etc.) of the analog RF transmission signals in the uplink transmissionpaths of the RF front end and/or parts of these signals reflected at therespective transmission antenna. Portions of the transmission signalsand their reflected parts may thus need to be provided or fed back tocontrol units (or feedback receivers) which are configured to control ortune the radio transceiver components. An example for such control unitmay be a baseband processor of the radio transceiver.

Radio transceivers and RF front ends supporting uplink carrieraggregation technology may include multiple RF transmission pathsoperating on different transmit bands providing cellular signals withdifferent center frequencies. The device 100 may be configured tosuitably provide portions of the multiple RF transmission signals of thedifferent transmission bands and their reflected parts to the controlunits (or feedback receivers). In addition, the device 100 may includeadditional (optional) components described below which may be configuredto suitably process the signals to be fed back to the control units. Thedevice 100 therefore represents a coupled path configurator supportinguplink carrier aggregation technology.

In this regard, the device 100 may receive portions of uplink RFtransmission signals and/or their reflected parts at the N input ports4.1 to 4.N of the switching unit 2. The switching unit 2 may selectivelyinterconnect each of the M output ports 6.1 to 6.M with a different oneof the N input ports 4.1 to 4.N. In the example of FIG. 1, a selectedinterconnection is indicated by solid arrows in the rectanglerepresenting the switching unit 2. In addition, dashed arrows shallindicate other possible interconnections. Here, signals required by acontrol unit of the radio transceiver may be selected and output to theM attenuators 8.1 to 8.M. The M attenuators 8.1 to 8.M. may thenoptionally attenuate the selected signals, and the attenuated signalsmay be forwarded to the control unit. Note that a more detailedoperation of a device similar to the device 100 is specified inconnection with FIG. 13.

FIG. 2 illustrates a schematic diagram of a device 200 in accordancewith the disclosure. The device 200 is illustrated in a general mannerin order to qualitatively specify a further aspect of the disclosure.The device 200 may include further components which are not illustratedfor the sake of simplicity. For example, the device 200 may furtherinclude one or more components of other devices described herein.

The device 200 may include a single-pole double-throw switch 10comprising a first input port 4.1, a second input port 4.2 and an outputport 6. The device 200 may further include a diplexer 12 comprising aninput port 14, a first output port 16.1 and a second output port 16.2,wherein the input port 14 of the diplexer 12 is electrically coupled tothe output port 6 of the single-pole double-throw switch 10. The device200 may further include a first attenuator 8.1 electrically coupled tothe first output port 16.1 of the diplexer 12 and a second attenuator8.2 electrically coupled to the second output port 16.2 of the diplexer12.

An operation of the device 200 may be at least partly similar to anoperation of the device 100. The device 200 may receive a portion of anuplink RF transmission signals and/or its reflected part at the inputports 4.1 and 4.2 of the single-pole double-throw switch 10. Inparticular, the received signal may include portions of two differenttransmission bands having different center frequencies. The diplexer 12may separate the signal into two signals including the contributions ofthe different transmission bands. The separated signals may beattenuated by the attenuators 8.1 and 8.2 before they are fed back to acontrol unit of the radio transceiver. Note that a more detailedoperation of a device similar to the device 200 is specified inconnection with FIG. 14.

FIG. 3 illustrates a schematic diagram of a device 300 in accordancewith the disclosure. The device 300 is illustrated in a general mannerin order to qualitatively specify a further aspect of the disclosure.The device 300 may include further components which are not illustratedfor the sake of simplicity. For example, the device 300 may furtherinclude one or more components of other devices described herein.

The device 300 may include at least two directional couplers 18.1 to18.P, i.e. P≥2. Each of the directional couplers 18.1 to 18.P may beconfigured to be arranged in an uplink transmission path 20.1 to 20.P ofan RF front end. The example of FIG. 3 illustrates three directionalcouplers arranged in three uplink transmission paths. However, furtherexamples may be based on a different number of directional couplers.Each of the directional couplers 18.1 to 18.P may include an input port22, a transmitted port 24, an isolated port 26 and a coupled port 28.The device 300 may further include an M-pole N-throw switch 30 includingN input ports 32.1 to 32.N and M output ports 34.1 to 34.M, whereinN≥M≥2. Each of the N input ports 32.1 to 32.N may be electricallycoupled to a coupled port 28 of a directional coupler or an isolatedport 26 of a directional coupler.

An operation of the device 300 may be at least partly similar to anoperation of the device 100. The M-pole N-throw switch 30 may receiveportions of uplink RF transmission signals at the N input ports 32.1 to32.N from the coupled ports 28 of the directional couplers 18.1 to 18.P.In addition, the M-pole N-throw switch 30 may receive reflected parts ofthe uplink RF transmission signals from the isolated ports 26 of thedirectional couplers 18.1 to 18.P. The M-pole N-throw switch 30 mayselectively interconnect each of the M output ports 34.1 to 34.M with adifferent one of the N input ports 32.1 to 32.N. Here, signals requiredby a control unit for controlling or tuning radio transceiver componentsmay be selected. Note that a more detailed operation of a device similarto the device 300 is specified in connection with FIG. 13.

FIGS. 4 to 14 schematically illustrate devices 400 to 1400 in accordancewith some examples. The devices 400 to 1400 may be seen as more detailedimplementations of at least one of the devices 100 to 300 such thatdetails of the devices 400 to 1400 described below may be likewiseapplied to at least one of the devices 100 to 300.

FIG. 4 illustrates a schematic diagram of a device 400 in accordancewith some examples. The device 400 may be at least partly similar to thedevice 100 of FIG. 1 and may include similar components. Each of the Mattenuators 8.1 to 8.M may be tunable, in particular digitally tunable.For example, the M attenuators 8.1 to 8.M may be controlled by a controlunit such as e.g. a baseband processor of a digital baseband system.Each of the attenuators 8.1 to 8.M may be configured to attenuate inputsignals in a broad frequency range including the mobile frequency bandson which a radio transceiver may be operated. For example, anattenuation of each attenuator may be tuned to lie in a range from about0 dB to about 16 dB. In one example, the switching unit 2 may include ormay correspond to an M-pole N-throw switch. In a further example: M=2and N=5.

The device 400 may further include N input ports 36.1 to 36.N, whereineach of the N input ports 36.1 to 36.N of the device 400 may beelectrically coupled to a different one of the N input ports 4.1 to 4.Nof the switching unit 2. In addition, the device 400 may include Moutput ports 38.1 to 38.M, wherein each of the M output ports 38.1 to38.M of the device 400 may be electrically coupled to a different one ofthe M attenuators 8.1 to 8.M. The N input ports 36.1 to 36.N and Moutput ports 38.1 to 38.M of the device 400 may particularly representexternal (or peripheral) ports of the device 400. For example, the portsmay have the form of pins.

The switching unit 2 and the M attenuators 8.1 to 8.M may bemonolithically integrated in a single semiconductor integrated circuit40. In one example, the single semiconductor integrated circuit 40 maybe a bulk CMOS integrated circuit. In a further example, the singlesemiconductor integrated circuit 40 may be a SOI (Silicon-on-Insulator)CMOS integrated circuit.

FIG. 5 illustrates a schematic diagram of a device 500 in accordancewith some examples. The device 500 may be at least partly similar to thedevice 400 of FIG. 4 and may include similar components. In addition,the device 500 may include M low pass filters 41.1 to 42.M, wherein eachof the M low pass filters 42.1 to 42.M may be interconnected between adifferent one of the M attenuators 8.1 to 8.M and a different one of theM output ports 38.1 to 38.M of the device 500. Each of the M low passfilters 42.1 to 42.M may be tunable, in particular digitally tunable.For example, the M low pass filters 42.1 to 42.M may be controlled by acontrol unit such as e.g. a baseband processor of a digital basebandsystem. In one example, all components of the device 500 may bemonolithically integrated in a single semiconductor integrated circuit40.

As explained above devices described herein may be configured to feedback uplink RF transmission signals of mobile frequency bands to acontrol unit of a radio transceiver. During an operation of the radiotransceiver, signals of a Wi-Fi frequency band may also be transmittedor received by the radio transceiver, wherein a crosstalk of the Wi-Fisignals into the mobile frequency signals may occur. In one example, oneor more of the M low pass filters 42.1 to 42.M may therefore beconfigured to attenuate or suppress at least one Wi-Fi frequency band inorder to avoid an undesired crosstalk. For example, Wi-Fi frequencybands may be located at around 2.4 GHz and 5.8 GHz. In a furtherexample, one or more of the M low pass filters 42.1 to 42.M may beconfigured to pass signals of at least one mobile communicationfrequency band, such as e.g. an LTE frequency band. In particular, thecutoff frequencies and characteristics of the M low pass filters 42.1 to42.M may be chosen to attenuate or suppress at least one Wi-Fi frequencyband and pass at least one mobile communication frequency band at thesame time.

FIG. 6 illustrates a schematic diagram of a device 600 in accordancewith some examples. The device 600 may be at least partly similar to thedevice 400 of FIG. 4 and may include similar components. In addition,the device 600 may include N low pass filters 44.1 to 44.N, wherein eachof the N low pass filters 44.1 to 44.N may be interconnected between adifferent one of the N input ports 36.1 to 36.N of the device 600 andthe N input ports 6.1 to 6.N of the switching unit 2. The N low passfilters 44.1 to 44.N may be similar to the M low pass filters 42.1 to42.N of the device 500 such that comments made in connection with FIG. 5may also hold true for FIG. 6. For example, all components of the device600 may be monolithically integrated in a single semiconductorintegrated circuit 40.

FIG. 7 illustrates a schematic diagram of a device 700 in accordancewith some examples. The device 700 may be at least partly similar to thedevice 500 of FIG. 5 and may include similar components. In addition,the device 700 may include N switches 46.1 to 46.N, wherein each of theN switches 46.1 to 46.N may be electrically interconnected between areference voltage V_(ref) and a different one of the N input ports 4.1to 4.N of the switching unit 2. In this regard, each of the N switches46.1 to 46.N may be electrically coupled to one of N lines 48.1 to 48.Ninterconnecting the N inputs 36.1 to 36.N of the device 700 and the Ninputs 4.1 to 4.N of the switching unit 2. In particular, the N switches46.1 to 46.N may be shunt switches. The reference voltage V_(ref) may bea DC reference voltage, more particular ground. For example, allcomponents of the device 700 may be monolithically integrated in asingle semiconductor integrated circuit 40.

During an operation of the device 700, the switching unit 2 mayselectively interconnect each of the M output ports 6.1 to 6.M with adifferent one of the N input ports 4.1 to 4.N. Accordingly, (N-M) of theinput ports 4.1 to 4.N are not interconnected to any of the M outputports 6.1 to 6.M. Here, the M switches coupled to the M interconnectedinput ports may be open, while the (N-M) switches coupled to the (N-M)non-interconnected input ports may be closed. By closing the (N-M)switches associated with the (N-M) non-interconnected input ports, the Mlines associated with the M interconnected input ports may beelectrically decoupled from the (N-M) lines associated with thenon-interconnected input ports. This way, an undesired crosstalk betweenthe lines 48.1 to 48.N may be reduced. For example, opening and closingone or more of the switches 46.1 to 46.N may be controlled by a controlunit such as e.g. a baseband processor of a digital baseband system.

FIG. 8 illustrates a schematic diagram of a device 800 in accordancewith some examples. The device 800 may be at least partly similar to thedevice 700 of FIG. 7 and may include similar components. In addition,the device 800 may include N resistors 50.1 to 50.N, wherein each of theN resistors 50.1 to 50.N may be electrically interconnected between adifferent one of the N switches 46.1 to 46.N and the reference voltageV_(ref). An opening and closing of the switches 46.1 to 46.N may beperformed as described in connection with FIG. 7. Here, the resistors50.1 to 50.N may enhance the described electrical decoupling between thelines associated with the closed switches and the lines associated withthe open switches. For example, all components of the device 800 may bemonolithically integrated in a single semiconductor integrated circuit40.

FIG. 9 illustrates a schematic diagram of a device 900 in accordancewith some examples. The device 900 may be at least partly similar to thedevice 800 of FIG. 8 and may include similar components. In addition,the device 900 may include N switches 52.1 to 52.N, wherein each of theN switches 52.1 to 52.N may be configured to bypass a respective one ofthe N resistors 50.1 to 50.M. In particular, the N switches 52.1 to 52.Nmay be RF switches. Opening and closing selected ones of the N switches52.1 to 52.N may be controlled by a control unit such as e.g. a basebandprocessor of a digital baseband system. For example, all components ofthe device 900 may be monolithically integrated in a singlesemiconductor integrated circuit 40.

FIG. 10 illustrates a schematic diagram of a device 1000 in accordancewith some examples. The device 1000 may be at least partly similar tothe device 500 of FIG. 5 and may include similar components. Inaddition, the device 1000 may include M single-ended to differentialconverters 54.1 to 54.M, wherein each of the M single-ended todifferential converters 54.1 to 54.M may be arranged downstream of adifferent one of the M attenuators 8.1 to 8.M. For example, allcomponents of the device 1000 may be monolithically integrated in asingle semiconductor integrated circuit 40.

Each of the M single-ended to differential converters 54.1 to 54.M maybe configured to receive a single signal from a different one of the Mlow pass filters 42.1 to 42.M and convert the received signal into adifferential signal which may be output at two output ports 56P and 56N.Here, the first output port 56P may provide a positive signal while thesecond output port 56N may provide a negative signal. Each of the Msingle-ended to differential converters 54.1 to 54.M may be tunable, inparticular digitally tunable. For example, each of the M single-ended todifferential converters 54.1 to 54.M may be tuned to optimize RFperformance at a particular center frequency. The M single-ended todifferential converters 54.1 to 54.M may be used in devices inaccordance with the disclosure with a design preferring differentialsignal processing over single-ended processing.

FIG. 11 illustrates a schematic diagram of a device 1100 in accordancewith some examples. The device 1100 may be at least partly similar tothe device 200 of FIG. 2 and may include similar components. Inaddition, the device 1100 may include two input ports 36.1 and 36.2,wherein each of the two input ports 36.1 and 36.2 of the device 1100 maybe electrically coupled to a different one of the two input ports 4.1and 4.2 of the single-pole double-throw switch 10. Further, the device1100 may include two output ports 38.1 and 38.2 and two low pass filters42.1 and 42.2, wherein each of the two low pass filters 42.1 and 42.2may be interconnected between a different one of the two attenuators 8.1and 8.2 and a different one of the two output ports 38.1 and 38.2. Theinput ports and output ports of the device 1100 may particularlyrepresent external (or peripheral) ports of the device 1100 and may e.g.have the form of pins. For example, all components of the device 1000may be monolithically integrated in a single semiconductor integratedcircuit 40.

FIG. 12 illustrates a schematic diagram of a device 1200 in accordancewith some examples. The device 1200 may be at least partly similar tothe device 300 of FIG. 3 and may include similar components. In theexample of FIG. 12, the directional couplers 18.1 to 18.P may beelectrically coupled to a device similar to the device 500 of FIG. 5.

FIG. 13 illustrates a schematic diagram of a circuitry 1300 including adevice in accordance with some examples similar to the device 500. Thecircuitry 1300 may be included in a radio transceiver, in particular inan RF front end of a radio transceiver.

The circuitry 1300 may include a front end module 58 which may includemultiple transmission-reception (TRX) sections 60.1 to 60.P. In general:P≥2, and in particular: 2≤P≤5. Each of the TRX sections 60.1 to 60.P maybe optimized for a specific TRX frequency. For example, a respective TRXsection may be configured to process (analog) signals of one of alow-band frequency in a range from about 699 MHz to about 960 MHz, amid-band frequency in a range from about 1.4 GHz to about 2.2 GHz, ahigh-band frequency in a range from about 2.3 GHz to about 2.7 GHz, andan ultra-high-band frequency in a range from about 3.5 GHz to about 3.8GHz. Each of the TRX sections 60.1 to 60.P may include multipletransmission (TX) paths and multiple reception (RX) paths, wherein eachmay inter alia include a power amplifier 62 and a filter 64. It isunderstood that the TX and RX paths may include further components whichare not illustrated for the sake of simplicity. In each of the TRXsections 60.1 to 60.P, a multiplexer or switch 66 may select between theindividual paths of the respective TRX section. The front end module 58may include multiple output ports 68.1 to 68.P, wherein each of themultiple output ports 68.1 to 68.P may be electrically coupled to adifferent one of the TRX sections 60.1 to 60.P.

The circuitry 1300 may further include multiple directional couplers18.1 to 18.P, each including an input port 22, a transmitted port 24, anisolated port 26 and a coupled port 28. For example, coupling factors ofthe directional couplers 18.1 to 18.P may lie in a range from about 20dB to about 30 dB. Each of the input ports 22 of the directionalcouplers 18.1 to 18.P may be electrically coupled to a different one ofthe output ports 68.1 to 68.P of the front end module 58. Further, eachof the transmitted ports 24 of the directional couplers 18.1 to 18.P maybe electrically coupled to a different antenna 70.1 to 70.P. Inparticular, the antennas 70.1 to 70.P may be configured to transmitsignals of a mobile communication frequency band. One or more of theantennas 70.1 to 70.P may be tunable and, if so, electrically coupled toan antenna tuner 72.1 to 72.P. The circuitry 1300 may include anadditional antenna (not illustrated) configured to transmit signals of aWi-Fi frequency band.

Each of the coupled ports 28 of the directional couplers 18.1 to 18.Pmay be electrically coupled to a different input port 36 of anintegrated circuit 40. If a directional coupler 18 is electricallycoupled to an antenna 70 including an antenna tuner 72, the isolatedport 26 of the respective directional coupler 18 may be electricallycoupled to an input port 36 of the integrated circuit 40. If adirectional coupler 18 is electrically coupled to an antenna 70 notincluding an antenna tuner 72, the isolated port 28 of the directionalcoupler 18 may be electrically coupled to a terminating impedance Z_(T).

The integrated circuit 40 may be similar to the device 500 of FIG. 5such that comments made in connection with FIG. 5 may also hold true forFIG. 13. Each of the output ports 38.1 to 38.M of the integrated circuit40 may be electrically coupled to a different one of multiple feedbackpaths 76.1 to 76.M including a power amplifier and additional componentswhich are not illustrated for the sake of simplicity. Each of thefeedback paths 76.1 to 76.M may be electrically coupled to a controlunit (or feedback receiver) of a radio transceiver, in particular itsbaseband system.

In an exemplary operational TX mode, a radio transceiver including thecircuitry 1300 may transmit TX signals via the first antenna 70.1 andthe second antenna 70.2. Here, a TX path of the first TRX section 60.1may process TX signals of a low frequency band, and a TX path of thesecond TRX section 60.2 may process TX signals of a mid frequency band.The processed low frequency band signal may be input to the input port22 of the first directional coupler 18.1. A first portion of the inputsignal may be output to the first antenna 70.1 via the transmitted port24, wherein the output first portion may be at least partly reflected atthe first antenna 70.1. The reflected part may be output at the isolatedport 26 of the first directional coupler 18.1 and forwarded to one ofthe input ports 36.1 to 36.N of the integrated circuit 40. A secondportion of the signal input to the input port 22 may be output at thecoupled port 28 and forwarded to one of the input ports 36.1 to 36.N ofthe integrated circuit 40. The processed mid frequency band may be inputto the second directional coupler 18.2 and processed in a similarfashion. However, since the second antenna 70.2 may not be tuned by anantenna tuner, the signal reflected at the second antenna 70.2 is notforwarded to one of the inputs 36.1 to 36.N of the integrated circuit40, but to a terminating impedance Z_(T).

Accordingly, in the specified exemplary TX mode, three inputs of theswitching unit 2 may receive signals from the directional couplers 18.1to 18.P, namely a signal from the coupled port 28 of the firstdirectional coupler 18.1, a signal from the isolated port 26 of thefirst directional coupler 18.1 and a signal from the coupled port 28 ofthe second directional coupler 18.2. Since only the two TRX sections60.1 and 60.2 of the front end module 58 actively process signals in theconsidered exemplary operational TX mode, the remaining (M−3) inputs ofthe switching unit 2 may not necessarily receive signals from thedirectional couplers 18.1 to 18.P.

The switching unit 2 may be controlled by a control unit (e.g. abaseband processor of the radio transceiver) to selectively interconnectthree of the M output ports with a different one of the three inputports of the switching unit 2 receiving the three signals from thedirectional couplers 18.1 and 18.2. The three signals may then beforwarded from the output ports 38 of the integrated circuit 40 to oneor more control units (or feedback receivers) via a respective feedbackpath 76. For example, the three signals may be forwarded to a basebandprocessor of the radio transceiver for further processing.

In a first example, a transmission and/or reception quality of the radiotransceiver may depend on a property (e.g. a power) of the TX signal inthe first transmission path 20.1. For example, the power of the TXsignal may need to be in a specific range to ensure a good transmissionquality. Based on the portion of the TX signal fed back to the controlunit of the radio transceiver via the coupled port 28 of the firstdirectional coupler 18.1 and the integrated circuit 40, the control unitmay e.g. control the gain of the power amplifier 62 in the TX path ofthe first TRX section 60.1 in order to optimize the TX signal in asuitable manner. In a similar fashion, the control unit may control thegain of the power amplifier 62 in the TX path of the second TRX section60.2 based on the portion of the TX signal fed back to the control unitvia the coupled port 28 of the second directional coupler 18.2 and theintegrated circuit 40.

In a second example, a transmission and/or reception quality of theradio transceiver may depend on a property of the part of the TX signalreflected at the first antenna 70.1. For example, a mismatch loss mayoccur due to the reflected signal parts. Based on the portion of thereflected TX signal fed back to the control unit of the radiotransceiver via the isolated port 26 of the first directional coupler18.1 and the integrated circuit 40, the control unit may e.g. tune andoptimize a transmission behavior of the antenna 70.1. For example, animpedance of the antenna 70.1 may be optimized by suitably controllingthe antenna tuner 72.1 such that an occurring mismatch loss may bereduced.

FIG. 14 illustrates a schematic diagram of a circuitry 1400 including adevice in accordance with some examples similar to the device 1100. Thecircuitry 1400 may be included in a radio transceiver, in particular inan RF front end of a radio transceiver.

The circuitry 1400 may include a front end module 58 including a firstTRX section 60.1 and a second TRX section 60.2 which may be similar tothe TRX sections 60.1 to 60.P of FIG. 13. In addition, the circuitry1400 may include a multiplexer 78, a directional coupler 18.1, anantenna 70.1 and an integrated circuit 40 which may be similar to thedevice 1100 of FIG. 11. It is noted that the circuitry 1400 may includefurther TRX sections and directional couplers which are not illustratedfor the sake of simplicity. The integrated circuit 40 may be coupled totwo feedback paths.

In an exemplary operational TX mode, a radio transceiver including thecircuitry 1400 may transmit TX signals via the first antenna 70.1. Here,a TX path of the first TRX section 60.1 may process TX signals of a lowfrequency band, and a TX path of the second TRX section 60.2 may processTX signals of a mid frequency band. The first and second processedsignal may be forwarded to the multiplexer 78 where the signals aremultiplexed into a serial TX signal. That is, the serial TX signal mayinclude low frequency band contributions and mid frequency bandcontributions. The serial TX signal may be input to the directionalcoupler 18.1 at the input port 22. As explained in connection with FIG.13, a portion of the serial TX signal may be output at the coupled port28 and a reflected part of the serial TX signal may be output at theisolated port 26.

The signals output at the isolated port 26 and the coupled port 28 maybe received at the first input 4.1 and the second input 4.2 of thesingle-pole double-throw switch 10, respectively. A control unit, suchas e.g. a baseband processor of a radio transceiver, may control thesingle-pole double-throw switch 10 to selectively interconnect itsoutput to one of its inputs 4.1 and 4.2. The diplexer 12 may receive theselected signal from the single-pole double-throw switch 10 and separatethe low frequency band contribution and high frequency band partcontribution of the selected signal. The separated signal contributionsmay be output at the two output ports of the diplexer 12. Afterattenuating and filtering the separated low frequency part and highfrequency part, the signals may be fed back to one or more control unitsof the radio transceiver as already discussed in connection with FIG.13.

In a first example, the control unit may e.g. control the gain of one ormore of the power amplifiers 62 in the TX paths of the TRX sections 60.1and 60.2 in order to optimize a transmission behavior of the radiotransceiver including the circuitry 1400. Such control may be based onthe portion of the TX signal fed back to the control unit via thecoupled port 28 of the directional coupler 18.1 and the integratedcircuit 40. Here, the single-pole double-throw switch 10 may selectivelyinterconnect its output to its second input 4.2 such that the requiredsignal is fed back to the control unit.

In a second example, the control unit may e.g. tune the antenna 70.1 bymeans of the antenna tuner 72.1 in order to optimize a transmissionbehavior of the radio transceiver including the circuitry 1400. Suchtuning may be based on the portion of the reflected TX signal fed backto the control unit of the radio transceiver via the isolated port 26 ofthe directional coupler 18.1 and the integrated circuit 40. Here, thesingle-pole double-throw switch 10 may selectively interconnect itsoutput to its first input 4.1 such that the required signal is fed backto the control unit.

As employed in this specification, the terms “connected”, “coupled”,“electrically connected” and/or “electrically coupled” may notnecessarily mean that elements must be directly connected or coupledtogether. Intervening elements may be provided between the “connected”,“coupled”, “electrically connected” or “electrically coupled” elements.

Furthermore, to the extent that the terms “having”, “containing”,“including”, “with” or variants thereof are used in either the detaileddescription or the claims, such terms are intended to be inclusive in amanner similar to the term “comprising”. That is, as used herein, theterms “having”, “containing”, “including”, “with”, “comprising” and thelike are open-ended terms that indicate the presence of stated elementsor features, but do not preclude additional elements or features. Thearticles “a”, “an” and “the” are intended to include the plural as wellas the singular, unless the context clearly indicates otherwise.

Moreover, the word “exemplary” is used herein to mean serving as anexample, instance, or illustration. Any aspect or design describedherein as “exemplary” is not necessarily to be construed as advantageousover other aspects or designs. Rather, use of the word exemplary isintended to present concepts in a concrete fashion. As used in thisapplication, the term “or” is intended to mean an inclusive “or” ratherthan an exclusive “or”. That is, unless specified otherwise, or clearfrom context, “X employs A or B” is intended to mean any of the naturalinclusive permutations. That is, if X employs A; X employs B; or Xemploys both A and B, then “X employs A or B” is satisfied under any ofthe foregoing instances. In addition, the articles “a” and “an” as usedin this application and the appended claims may generally be construedto mean “one or more” unless specified otherwise or clear from contextto be directed to a singular form. Also, at least one of A and B or thelike generally means A or B or both A and B.

Devices and methods performed by such devices are described herein.Comments made in connection with a described device may also hold truefor a method performed by the device and vice versa. For example, if aspecific component of a device is described, a corresponding methodperformed by the device may include an act of operating the component ina suitable manner, even if such act is not explicitly described orillustrated in the figures. In addition, the features of the variousexemplary aspects and exampled described herein may be combined witheach other, unless specifically noted otherwise.

Although the disclosure has been shown and described with respect to oneor more implementations, equivalent alterations and modifications willoccur to others skilled in the art based at least in part upon a readingand understanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components(e.g., elements, resources, etc.), the terms used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure which performs thefunction in the herein illustrated exemplary implementations of thedisclosure. In addition, while a particular feature of the disclosuremay have been disclosed with respect to only one of severalimplementations, such feature may be combined with one or more otherfeatures of the other implementations as may be desired and advantageousfor any given or particular application.

The invention claimed is:
 1. A device, comprising: a switch comprising Ninput ports and M output ports, wherein N≥M≥2, wherein the switch isconfigured to selectively interconnect each of the M output ports with adifferent one of the N input ports; M attenuators, wherein each of the Mattenuators is electrically coupled to a different one of the M outputports of the switch; and N low pass filters, wherein each of the N lowpass filters is electrically coupled to a different one of the N inputports of the switch.
 2. The device of claim 1, wherein the switchcomprises an M-pole N-throw switch.
 3. The device of claim 1, whereinM=2 and N=5.
 4. The device of claim 1, wherein each of the N input portsof the device is configured to be electrically coupled to a coupled portof a directional coupler or an isolated port of a directional coupler.5. The device of claim 4, wherein the directional coupler is arranged inan uplink transmission path of an RF front end.
 6. The device of claim1, wherein each of the M output ports of the device is configured to beelectrically coupled to a processor, and wherein the processor isconfigured to tune an uplink antenna or a power amplifier arranged in anuplink transmission path of an RF front end based on an output of thedevice.
 7. The device of claim 1, wherein at least one of the switch andthe M attenuators is controlled by a baseband processor.
 8. The deviceof claim 1, wherein the switch, the M attenuators, and the N low passfilters -are monolithically integrated in a single semiconductorintegrated circuit.
 9. The device of claim 1, further comprising: M lowpass filters, wherein each of the M low pass filters is electricallycoupled to a different one of the M attenuators.
 10. The device of claim9, wherein each of the M low pass filters is configured to attenuate aWi-Fi frequency band.
 11. The device of claim 9, wherein each of the Mlow pass filters is configured to pass a mobile communication frequencyband.
 12. The device of claim 1, further comprising: N switches, whereineach of the N switches is electrically interconnected between areference voltage and a different one of the N input ports of theswitch.
 13. The device of claim 12, further comprising: N resistors,wherein each of the N resistors is electrically interconnected between adifferent one of the N switches and the reference voltage.
 14. Thedevice of claim 1, further comprising: M single-ended to differentialconverters, wherein each of the M single-ended to differentialconverters is arranged downstream of a different one of the Mattenuators.
 15. A device, comprising: a switch comprising N input portsand M output ports, wherein N≥M≥2, wherein the switch is configured toselectively interconnect each of the M output ports with a different oneof the N input ports; M attenuators, wherein each of the M attenuatorsis electrically coupled to a different one of the M output ports of theswitch; N switches, wherein each of the N switches is electricallyinterconnected between a reference voltage and a different one of the Ninput ports of the switch; and N resistors, wherein each of the Nresistors is electrically interconnected between a different one of theN switches and the reference voltage.
 16. The device of claim 15,wherein the switch, the M attenuators, the N switches, and the Nresistors are monolithically integrated in a single semiconductorintegrated circuit.
 17. The device of claim 15, further comprising: Mlow pass filters, wherein each of the M low pass filters is electricallycoupled to a different one of the M attenuators.
 18. The device of claim17, wherein each of the M low pass filters is configured to attenuate aWi-Fi frequency band.
 19. The device of claim 17, wherein each of the Mlow pass filters is configured to pass a mobile communication frequencyband.